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STI24NM65N

STI24NM65N

Image is for reference, please contact us to get the real picture

Part No :

STI24NM65N

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 19A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
467146 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2025
PDF
STI24NM65N PDF
Type Description
Series:MDmesh™ II
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STI24NM65N is available at GangBo-ic.com, Please review product page below for detailed information, including STI24NM65N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STI24NM65N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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