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IRFBE30L

IRFBE30L

MOSFET N-CH 800V 4.1A I2PAK

IRFBE30L

IRFBE30L

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Part No :

IRFBE30L

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 4.1A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
816981 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 07 - Mar 11 2025
PDF
IRFBE30L PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:78 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRFBE30L is available at GangBo-ic.com, Please review product page below for detailed information, including IRFBE30L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFBE30L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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