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SI4435DYPBF

SI4435DYPBF

MOSFET P-CH 30V 8A 8SO

SI4435DYPBF

SI4435DYPBF

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Part No :

SI4435DYPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 8A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
836983 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 07 - Mar 11 2025
PDF
SI4435DYPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Discontinued at Digi-Key
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2320 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
SI4435DYPBF is available at GangBo-ic.com, Please review product page below for detailed information, including SI4435DYPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SI4435DYPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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