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NVD6416ANLT4G-001

NVD6416ANLT4G-001

MOSFET N-CH 100V 19A DPAK-3

NVD6416ANLT4G-001

NVD6416ANLT4G-001

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Part No :

NVD6416ANLT4G-001

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 19A DPAK-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
846384 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:74mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C
Mounting Type:Surface Mount
Supplier Device Package:DPAK-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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