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RP1E070XNTCR

RP1E070XNTCR

MOSFET N-CH 30V 7A MPT6

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RP1E070XNTCR

RP1E070XNTCR

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Part No :

RP1E070XNTCR

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 7A MPT6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
956395 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
RP1E070XNTCR PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MPT6
Package / Case:6-SMD, Flat Leads
RP1E070XNTCR is available at GangBo-ic.com, Please review product page below for detailed information, including RP1E070XNTCR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RP1E070XNTCR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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