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NVMFS6B85NLT1G

NVMFS6B85NLT1G

MOSFET N-CH 100V 5.6A/19A 5DFN

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NVMFS6B85NLT1G

NVMFS6B85NLT1G

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Part No :

NVMFS6B85NLT1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 5.6A/19A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
346334 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
NVMFS6B85NLT1G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:5.6A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:46mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.9 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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