MOSFET N-CH 55V 10.3A D2PAK
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 130mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 5.2 nC @ 5 V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 330 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 33W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTP27N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 27A TO220AB |
|
SI7856ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
|
IRF644NSTRLPBFVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
FQD5N40TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 3.4A DPAK |
|
BSO130P03SNTMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8DSO |
|
STD30NE06LT4STMicroelectronics |
MOSFET N-CH 60V 30A DPAK |
|
IPP100N06S2L05AKSA1IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
IRF6216TRPBF-1IR (Infineon Technologies) |
MOSFET P-CH 150V 2.2A SOT223 |
|
AO4406ALAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A 8SOIC |
|
RJK0301DPB-WS#J0Renesas Electronics America |
MOSFET N-CH 30V 60A 5LFPAK |
|
SPI11N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO262-3 |
|
IRF7453TRPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 2.2A 8SO |
|
IRF3707ZPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A TO220AB |