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IRF6893MTR1PBF

IRF6893MTR1PBF

MOSFET N-CH 25V 29A DIRECTFET

RER45F68R1RC02

RER45F68R1RC02

RES CHAS MNT 68.1 OHM 1% 10W

IRF6893MTR1PBF

IRF6893MTR1PBF

Image is for reference, please contact us to get the real picture

Part No :

IRF6893MTR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 29A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
996299 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRF6893MTR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 168A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3480 pF @ 13 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
IRF6893MTR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6893MTR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6893MTR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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