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IRF1902PBF

IRF1902PBF

MOSFET N-CH 20V 4.2A 8SO

IRF1902PBF

IRF1902PBF

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Part No :

IRF1902PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 4.2A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
116311 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRF1902PBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
Rds On (Max) @ Id, Vgs:85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
IRF1902PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1902PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1902PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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