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IPD350N06LGBUMA1

IPD350N06LGBUMA1

MOSFET N-CH 60V 29A TO252-3

IPD350N06LGBUMA1

IPD350N06LGBUMA1

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Part No :

IPD350N06LGBUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 29A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
016101 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 27 - Oct 01 2024
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 29A, 10V
Vgs(th) (Max) @ Id:2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 30 V
FET Feature:-
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD350N06LGBUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD350N06LGBUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD350N06LGBUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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