MOSFET N-CH 55V 10A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 140mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.9 nC @ 5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 265 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STB11NM60N-1STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
IPP100N06S3-04IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
RJK5012DPE-00#J3Renesas Electronics America |
MOSFET N-CH 500V 12A 4LDPAK |
|
SIB412DK-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 9A PPAK SC75-6 |
|
IRFR3505TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
|
IXTQ200N06PWickmann / Littelfuse |
MOSFET N-CH 60V 200A TO3P |
|
IRF7324D1IR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
IXFH20N60QWickmann / Littelfuse |
MOSFET N-CH 600V 20A TO247AD |
|
IRF7424TRIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
IRF9520STRRVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
|
IRF3707ZSPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
FDC3512_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 3A SUPERSOT6 |
|
IRFR120TRVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |