MOSFET N-CH 100V 9.7A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 200mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 330 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFP360LCVishay / Siliconix |
MOSFET N-CH 400V 23A TO247-3 |
|
2SK4196LS-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F-3FS |
|
ZVN4306AVSTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.1A E-LINE |
|
2N6660JTX02Vishay / Siliconix |
MOSFET N-CH 60V 990MA TO205AD |
|
BUK725R0-40C,118Nexperia |
MOSFET N-CH 40V 75A DPAK |
|
IPD350N06LGBUMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 29A TO252-3 |
|
HUF76419S3ST-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 29A D2PAK |
|
SPI07N60S5HKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO262-3 |
|
IPBH6N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO263-3 |
|
IRL3714ZSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
EPC2012EPC |
GANFET N-CH 200V 3A DIE |
|
NVMFS5885NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.2A 5DFN |
|
IRFZ48NSTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 64A D2PAK |