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SIB412DK-T1-GE3

SIB412DK-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIB412DK-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 9A PPAK SC75-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
716071 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SIB412DK-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.16 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.4W (Ta), 13W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-75-6L Single
Package / Case:PowerPAK® SC-75-6L
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