MOSFET N-CH 600V 4A TO220AB
Type | Description |
---|---|
Series: | Polar™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.1Ohm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 20 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1180 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 41W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SIB413DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC75-6 |
![]() |
NVMFS5C682NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
![]() |
TK4A65DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 3.5A TO220SIS |
![]() |
STU95N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
![]() |
IRL540LVishay / Siliconix |
MOSFET N-CH 100V 28A TO262-3 |
![]() |
IRF7475TRPBFIR (Infineon Technologies) |
MOSFET N-CH 12V 11A 8SO |
![]() |
IPB136N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 45A D2PAK |
![]() |
FDI3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A I2PAK |
![]() |
RJK6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
![]() |
TSM4NB60CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO220 |
![]() |
IPD180N10N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO252-3 |
![]() |
BXL4004-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A TO220-3 |
![]() |
IRFR020PBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |