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RJK2009DPM-00#T0

RJK2009DPM-00#T0

MOSFET N-CH 200V 40A TO3PFM

RJK2009DPM-00#T0

RJK2009DPM-00#T0

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Part No :

RJK2009DPM-00#T0

Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 200V 40A TO3PFM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
655865 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
RJK2009DPM-00#T0 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:36mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:TO-3PFM
Package / Case:TO-3PFM, SC-93-3
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