MOSFET P-CH 100V 5.6A TO251AA
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 390 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ZVN0540AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 400V 90MA TO92-3 |
|
STP185N10F3STMicroelectronics |
MOSFET N-CH 100V 120A TO220 |
|
IRFP4410ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO247AC |
|
SI4660DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 23.1A 8SO |
|
IRFU9120NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A IPAK |
|
IRFS644B_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 14A TO220F |
|
SUD50P08-26-E3Vishay / Siliconix |
MOSFET P-CH 80V 50A TO252 |
|
IRL630SVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
|
SIA450DJ-T1-E3Vishay / Siliconix |
MOSFET N-CH 240V 1.52A PPAK |
|
IRL1004SIR (Infineon Technologies) |
MOSFET N-CH 40V 130A D2PAK |
|
NTMFS4834NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/130A 5DFN |
|
PH16030L,115NXP Semiconductors |
MOSFET N-CH 30V 38A LFPAK56 |
|
IRFZ48ZIR (Infineon Technologies) |
MOSFET N-CH 55V 61A TO220AB |