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SIA850DJ-T1-GE3

SIA850DJ-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIA850DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 190V 950MA PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
275627 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
PDF
SIA850DJ-T1-GE3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):190 V
Current - Continuous Drain (Id) @ 25°C:950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:90 pF @ 100 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):1.9W (Ta), 7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Dual
Package / Case:PowerPAK® SC-70-6 Dual
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