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FQP19N10

FQP19N10

MOSFET N-CH 100V 19A TO220-3

FQP19N10

FQP19N10

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Part No :

FQP19N10

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 19A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
325632 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FQP19N10 PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:780 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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