MOSFET N-CH 25V 50A TO251-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25 V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8.8mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1642 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 63W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF3711ZLIR (Infineon Technologies) |
MOSFET N-CH 20V 92A TO262 |
|
IXFR27N80QWickmann / Littelfuse |
MOSFET N-CH 800V 27A ISOPLUS247 |
|
SI2327DS-T1-E3Vishay / Siliconix |
MOSFET P-CH 200V 380MA SOT23-3 |
|
NTP18N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A TO220AB |
|
TK4P55DA(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 3.5A DPAK |
|
IXTH40N30Wickmann / Littelfuse |
MOSFET N-CH 300V 40A TO247 |
|
IRFIB5N65AVishay / Siliconix |
MOSFET N-CH 650V 5.1A TO220-3 |
|
IXTP182N055TWickmann / Littelfuse |
MOSFET N-CH 55V 182A TO220AB |
|
IPP80N06S3-05IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
|
IXFT21N50QWickmann / Littelfuse |
MOSFET N-CH 500V 21A TO268 |
|
IRFI9620GVishay / Siliconix |
MOSFET P-CH 200V 3A TO220-3 |
|
SPB70N10LIR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
|
SI1056X-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 1.32A SC89-6 |