MOSFET N-CH 500V 21A TO268
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 250mOhm @ 10.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 84 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 280W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFI9620GVishay / Siliconix |
MOSFET P-CH 200V 3A TO220-3 |
|
SPB70N10LIR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO263-3 |
|
SI1056X-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 1.32A SC89-6 |
|
STF3HNK90ZSTMicroelectronics |
MOSFET N-CH 800V 3A TO220FP |
|
HAF1002-90STL-ERenesas Electronics America |
MOSFET P-CH 60V 15A 4LDPAK |
|
IRF8113IR (Infineon Technologies) |
MOSFET N-CH 30V 17.2A 8SO |
|
AOI472AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 25V 18A/46A TO251A |
|
DMJ70H1D3SI3Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 700V 4.6A TO251 |
|
DMG4N65CTZetex Semiconductors (Diodes Inc.) |
MOSFET N CH 650V 4A TO220-3 |
|
IRL540NLIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO262 |
|
SI7445DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 12A PPAK 1212-8 |
|
SI4398DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 19A 8SO |
|
NTD4959NH-1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/58A IPAK |