MOSFET N-CH 40V 75A TO262
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.5mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 100 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
ZXMN3A01E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.4A SOT23-6 |
![]() |
IXTC180N085TWickmann / Littelfuse |
MOSFET N-CH 85V 110A ISOPLUS220 |
![]() |
BUK9Y12-80E,115Nexperia |
MOSFET N-CH 80V LFPAK56 PWR-SO8 |
![]() |
SI1031X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 155MA SC75A |
![]() |
2SK2917(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 18A TO3PIS |
![]() |
IRLR4343-701PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 26A IPAK |
![]() |
TK16C60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A I2PAK |
![]() |
AOTF10N60L_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220-3F |
![]() |
RJK6032DPD-00#J2Renesas Electronics America |
MOSFET N-CH 600V 3A MP3A |
![]() |
IRF6636TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 18A DIRECTFET |
![]() |
IRF6722MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A DIRECTFET |
![]() |
IRF9540NLIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO262 |
![]() |
AO4446Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SOIC |