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IRF6636TR1PBF

IRF6636TR1PBF

MOSFET N-CH 20V 18A DIRECTFET

FFSD-13-D-18.03-01-N

FFSD-13-D-18.03-01-N

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IRF6636TR1PBF

IRF6636TR1PBF

Image is for reference, please contact us to get the real picture

Part No :

IRF6636TR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 20V 18A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
435143 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
PDF
IRF6636TR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2420 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ ST
Package / Case:DirectFET™ Isometric ST
IRF6636TR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6636TR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6636TR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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