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IRFS31N20DTRL

IRFS31N20DTRL

MOSFET N-CH 200V 31A D2PAK

IRFS31N20DTRL

IRFS31N20DTRL

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Part No :

IRFS31N20DTRL

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 31A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
554055 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
IRFS31N20DTRL PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS31N20DTRL is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS31N20DTRL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS31N20DTRL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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