MOSFET P-CH 60V 6.5A TO252-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 250mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.8 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 420 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 28W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3-313 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HUFA75333P3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 55V 66A TO220-3 |
|
IRFZ34NSIR (Infineon Technologies) |
MOSFET N-CH 55V 29A D2PAK |
|
ZXMN3A02N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 7.3A 8SO |
|
STP7NB60STMicroelectronics |
MOSFET N-CH 600V 7.2A TO220AB |
|
SI1056X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V SC89-6 |
|
ZXM64P035GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 35V 3.8A/5.3A SOT223 |
|
IRL620SVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
STD3NM60-1STMicroelectronics |
MOSFET N-CH 600V 3A IPAK |
|
IRLZ24NSIR (Infineon Technologies) |
MOSFET N-CH 55V 18A D2PAK |
|
IRFR014TRRVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
AOB210LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/105A TO263 |
|
IRL1104LPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 104A TO262 |
|
SI4833ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.6A 8SO |