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H7N1002LS-E

H7N1002LS-E

MOSFET N-CH 100V 75A 4LDPAK

H7N1002LS-E

H7N1002LS-E

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Part No :

H7N1002LS-E

Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 100V 75A 4LDPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
253925 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 21 - Nov 25 2024
PDF
H7N1002LS-E PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9700 pF @ 10 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-LDPAK
Package / Case:SC-83
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