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MTD6N20ET4G

MTD6N20ET4G

MOSFET N-CH 200V 6A DPAK

MTD6N20ET4G

MTD6N20ET4G

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Part No :

MTD6N20ET4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
393839 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
PDF
MTD6N20ET4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:700mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.75W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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