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SI4666DY-T1-GE3

SI4666DY-T1-GE3

MOSFET N-CH 25V 16.5A 8SO

SI4666DY-T1-GE3

SI4666DY-T1-GE3

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Part No :

SI4666DY-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 16.5A 8SO
Catalog
Transistors - FETs, MOSFETs - Single
Availability
503850 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
PDF
SI4666DY-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1145 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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