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SIR808DP-T1-GE3

SIR808DP-T1-GE3

MOSFET N-CH 25V 20A PPAK SO-8

SIR808DP-T1-GE3

SIR808DP-T1-GE3

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Part No :

SIR808DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 20A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
073807 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
SIR808DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:815 pF @ 12.5 V
FET Feature:-
Power Dissipation (Max):29.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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