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FQB8N60CTM-WS

FQB8N60CTM-WS

MOSFET N-CH 600V 7.5A D2PAK

FQB8N60CTM-WS

FQB8N60CTM-WS

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Part No :

FQB8N60CTM-WS

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 7.5A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
103810 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
PDF
FQB8N60CTM-WS PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1255 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 147W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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