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IPI65R280E6XKSA1

IPI65R280E6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

IPI65R280E6XKSA1

IPI65R280E6XKSA1

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Part No :

IPI65R280E6XKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 13.8A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
193719 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
IPI65R280E6XKSA1 PDF
Type Description
Series:CoolMOS™ E6
Package:Tube
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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