MOSFET N-CH 100V 350A SOT-227B
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 350A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.5mOhm @ 175A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 640 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 27000 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Supplier Device Package: | SOT-227B |
Package / Case: | SOT-227-4, miniBLOC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTJS4405NT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |
|
BSS138W-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 0.2A SOT323 |
|
IXTP200N075TWickmann / Littelfuse |
MOSFET N-CH 75V 200A TO220AB |
|
FQD7N20TM_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 5.3A DPAK |
|
IRL3716SPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 180A D2PAK |
|
64-6006PBFIR (Infineon Technologies) |
MOSFET N-CH 300V 46A TO247AC |
|
FDS4435BZ-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8SOIC |
|
HUFA75823D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 14A TO252AA |
|
IRFP460PVishay / Siliconix |
MOSFET N-CH 500V 20A TO247-3 |
|
PMF400UN,115NXP Semiconductors |
MOSFET N-CH 30V 830MA SOT323-3 |
|
STB16NF25STMicroelectronics |
MOSFET N-CH 30V 14.5A D2PAK |
|
BSP129L6906HTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 350MA SOT223-4 |
|
IRF634NSPBFVishay / Siliconix |
MOSFET N-CH 250V 8A D2PAK |