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MOSFET N-CH 30V 32A DIRECTFET

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IRF6727MTR1PBF

IRF6727MTR1PBF

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Part No :

IRF6727MTR1PBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 32A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
813481 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRF6727MTR1PBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.7mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6190 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 89W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MX
Package / Case:DirectFET™ Isometric MX
IRF6727MTR1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6727MTR1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6727MTR1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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