CAP CER 10PF 2000V C0G/NP0 1111
DC DC CONVERTER 24V -24V 5W
MOSFET N-CH 400V 7.6A TO220FL
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 400 V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 550mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 24.5 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 850 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 32W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FL |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IPP06CN10NGXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
![]() |
PHB78NQ03LT,118NXP Semiconductors |
MOSFET N-CH 25V 40A D2PAK |
![]() |
SUM110P08-11-E3Vishay / Siliconix |
MOSFET P-CH 80V 110A TO263 |
![]() |
TPC8021-H(TE12LQ,MToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 11A 8SOP |
![]() |
FQAF12N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7.8A TO3PF |
![]() |
SUP85N10-10P-GE3Vishay / Siliconix |
MOSFET N-CH 100V 85A TO220AB |
![]() |
IPD530N15N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A TO252-3 |
![]() |
TPCC8002-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 22A 8TSON |
![]() |
IXTA240N055T7Wickmann / Littelfuse |
MOSFET N-CH 55V 240A TO263-7 |
![]() |
SUM70N04-07L-E3Vishay / Siliconix |
MOSFET N-CH 40V 70A TO263 |
![]() |
IRFR2607ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 42A DPAK |
![]() |
IRLR7833TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A DPAK |
![]() |
IRF3717PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 20A 8SO |