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IPI80P04P4L06AKSA1

IPI80P04P4L06AKSA1

MOSFET P-CH 40V 80A TO262-3

IPI80P04P4L06AKSA1

IPI80P04P4L06AKSA1

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Part No :

IPI80P04P4L06AKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 40V 80A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
443344 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPI80P04P4L06AKSA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:104 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:6580 pF @ 25 V
FET Feature:-
Power Dissipation (Max):88W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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