MOSFET P-CH 100V 1.1A SOT223
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2Ohm @ 660mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.7 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
2SK3817-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 60A SMP-FD |
![]() |
TSM22P10CZ C0GTSC (Taiwan Semiconductor) |
MOSFET P-CH 100V 22A TO220 |
![]() |
IRLU8113PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 94A I-PAK |
![]() |
NP34N055SLE-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 34A TO252 |
![]() |
IRFS59N10DTRRPIR (Infineon Technologies) |
MOSFET N-CH 100V 59A D2PAK |
![]() |
IPP80N04S3H4AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
![]() |
2SK4126Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 15A TO3PB |
![]() |
AO3460Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 650MA SOT23-3L |
![]() |
IPS031N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO251-3 |
![]() |
SI4176DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A 8SO |
![]() |
SIS334DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 20A PPAK1212-8 |
![]() |
SPP04N50C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 4.5A TO220-3 |
![]() |
NTB30N06LGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A D2PAK |