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RDN050N20FU6

RDN050N20FU6

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Part No :

RDN050N20FU6

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 5A TO220FN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
343334 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 18 - Apr 22 2025
PDF
RDN050N20FU6 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:720mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:18.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:292 pF @ 10 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FN
Package / Case:TO-220-3 Full Pack
RDN050N20FU6 is available at GangBo-ic.com, Please review product page below for detailed information, including RDN050N20FU6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RDN050N20FU6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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