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AMPMEFC-49.1520T3

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MEMS OSC XO 49.1520MHZ CMOS SMD

IRF3808LPBF

IRF3808LPBF

MOSFET N-CH 75V 106A TO262

IRF3808LPBF

IRF3808LPBF

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Part No :

IRF3808LPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 75V 106A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
803280 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
IRF3808LPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 82A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF3808LPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF3808LPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF3808LPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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