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SI8469DB-T2-E1

SI8469DB-T2-E1

MOSFET P-CH 8V 4.6A 4MICROFOOT

SI8469DB-T2-E1

SI8469DB-T2-E1

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Part No :

SI8469DB-T2-E1

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 8V 4.6A 4MICROFOOT
Catalog
Transistors - FETs, MOSFETs - Single
Availability
873287 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
SI8469DB-T2-E1 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:64mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 4.5 V
Vgs (Max):±5V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 4 V
FET Feature:-
Power Dissipation (Max):780mW (Ta), 1.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-Microfoot
Package / Case:4-UFBGA
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