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FQB3N80TM

FQB3N80TM

MOSFET N-CH 800V 3A D2PAK

FQB3N80TM

FQB3N80TM

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Part No :

FQB3N80TM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 800V 3A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
213121 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 05 - Mar 09 2025
Type Description
Series:QFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:690 pF @ 25 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQB3N80TM is available at GangBo-ic.com, Please review product page below for detailed information, including FQB3N80TM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQB3N80TM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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