MOSFET N-CH 30V 29A 8SO
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.6mOhm @ 19.8A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 115 nC @ 10 V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 4800 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 3W (Ta), 6.6W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOI403Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO251A |
|
PHB146NQ06LT,118NXP Semiconductors |
MOSFET N-CH 55V 75A D2PAK |
|
FQD13N10LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A DPAK |
|
BSP123E6327TIR (Infineon Technologies) |
MOSFET N-CH 100V 370MA SOT223-4 |
|
STB60N55F3STMicroelectronics |
MOSFET N-CH 55V 80A D2PAK |
|
2SK4125-1EXSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 17A TO3P-3L |
|
SI7380ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
IRL3202STRRIR (Infineon Technologies) |
MOSFET N-CH 20V 48A D2PAK |
|
IRL1004STRRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 130A D2PAK |
|
STULED524STMicroelectronics |
MOSFET N-CH 525V 4A IPAK |
|
IRF540ZIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO220AB |
|
HUFA76629D3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 20A IPAK |
|
IRL640STRRVishay / Siliconix |
MOSFET N-CH 200V 17A D2PAK |