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STB6NM60N

STB6NM60N

MOSFET N-CH 600V 4.6A D2PAK

STB6NM60N

STB6NM60N

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Part No :

STB6NM60N

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 4.6A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
062806 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
STB6NM60N PDF
Type Description
Series:MDmesh™ II
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 50 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STB6NM60N is available at GangBo-ic.com, Please review product page below for detailed information, including STB6NM60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB6NM60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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