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IRF1405S

IRF1405S

MOSFET N-CH 55V 131A D2PAK

IRF1405S

IRF1405S

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Part No :

IRF1405S

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 131A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
192819 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
IRF1405S PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:131A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.3mOhm @ 101A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5480 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF1405S is available at GangBo-ic.com, Please review product page below for detailed information, including IRF1405S price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF1405S to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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