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IRF6604TR1

IRF6604TR1

MOSFET N-CH 30V 12A DIRECTFET

IRF6604TR1

IRF6604TR1

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Part No :

IRF6604TR1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 12A DIRECTFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
382738 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
IRF6604TR1 PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Rds On (Max) @ Id, Vgs:11.5mOhm @ 12A, 7V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2270 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.3W (Ta), 42W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DIRECTFET™ MQ
Package / Case:DirectFET™ Isometric MQ
IRF6604TR1 is available at GangBo-ic.com, Please review product page below for detailed information, including IRF6604TR1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF6604TR1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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