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SI5461EDC-T1-GE3

SI5461EDC-T1-GE3

MOSFET P-CH 20V 4.5A 1206-8

SI5461EDC-T1-GE3

SI5461EDC-T1-GE3

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Part No :

SI5461EDC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 4.5A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
442744 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 19 - Nov 23 2024
PDF
SI5461EDC-T1-GE3 PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:45mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:1206-8 ChipFET™
Package / Case:8-SMD, Flat Lead
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