MOSFET N-CH 40V 195A TO262
HEATSHRINK 3:1 6.4MMX4'
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.3mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 240 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6450 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IXTR90P10PWickmann / Littelfuse |
MOSFET P-CH 100V 57A ISOPLUS247 |
|
NTD2955PT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
|
AO4714Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A 8SOIC |
|
IRFR5505TRRIR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |
|
IRLZ24STRLVishay / Siliconix |
MOSFET N-CH 60V 17A D2PAK |
|
SSM3K17SU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 50V 100MA USM |
|
SI8451DB-T2-E1Vishay / Siliconix |
MOSFET P-CH 20V 10.8A 6MICROFOOT |
|
AOD403_DELTAAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO252 |
|
RJK5031DPD-00#J2Renesas Electronics America |
MOSFET N-CH 500V 3A MP3A |
|
IPD90N06S404ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
STD2NK70Z-1STMicroelectronics |
MOSFET N-CH 700V 1.6A IPAK |
|
IPP11N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO220-3 |
|
TK55D10J1(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 55A TO220 |