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TK55D10J1(Q)

TK55D10J1(Q)

MOSFET N-CH 100V 55A TO220

IDSD-19-D-18.00

IDSD-19-D-18.00

INSULATION DISPLACEMENT TERMINAL

TK55D10J1(Q)

TK55D10J1(Q)

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Part No :

TK55D10J1(Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 55A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
022602 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
TK55D10J1(Q) PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:55A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10.5mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 10 V
FET Feature:-
Power Dissipation (Max):140W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220(W)
Package / Case:TO-220-3
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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