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2SK1119(F)

2SK1119(F)

MOSFET N-CH 1000V 4A TO220AB

2SK1119(F)

2SK1119(F)

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Part No :

2SK1119(F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 1000V 4A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
532553 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
2SK1119(F) PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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