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SI5475DDC-T1-GE3

SI5475DDC-T1-GE3

MOSFET P-CH 12V 6A 1206-8

SI5475DDC-T1-GE3

SI5475DDC-T1-GE3

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Part No :

SI5475DDC-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 12V 6A 1206-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
552555 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
SI5475DDC-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:32mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 6 V
FET Feature:-
Power Dissipation (Max):2.3W (Ta), 5.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:1206-8 ChipFET™
Package / Case:8-SMD, Flat Lead
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