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2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

MOSFET N-CH 900V 1A DP

2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

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Part No :

2SK2845(TE16L1,Q)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 900V 1A DP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
392439 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
2SK2845(TE16L1,Q) PDF
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DP
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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