MOSFET N-CH 30V 22A/55A 8DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1210 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 5.5W (Ta), 35.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR120ZTRIR (Infineon Technologies) |
MOSFET N-CH 100V 8.7A DPAK |
|
NTD32N06LGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A DPAK |
|
IRF1010ZLIR (Infineon Technologies) |
MOSFET N-CH 55V 75A TO262 |
|
IPB072N15N3GE8187ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 100A TO263-3 |
|
SI1307EDL-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 850MA SC70-3 |
|
NP80N06MLG-S18-AYRenesas Electronics America |
MOSFET N-CH 60V 80A TO220-3 |
|
SI1405DL-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 1.6A SC70-6 |
|
IRFZ44RSTRRVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
SPP06N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.2A TO220-3 |
|
BSS138N-E6327IR (Infineon Technologies) |
MOSFET N-CH 60V 230MA SOT23-3 |
|
FQA10N80_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 9.8A TO3P |
|
IRFI4905IR (Infineon Technologies) |
MOSFET P-CH 55V 41A TO220AB FP |
|
FDD3682-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.5/32A TO252AA |